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| Excelics * * * * * 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +36.0dBm TYPICAL P1dB OUTPUT POWER 7/6dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1415-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Power Added Efficiency at 1dB compression f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24mA -13 2200 rd MIN 35.0 6 TYP 36.0 7 25 1800 43 2880 3000 -1.0 -15 4.5 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth % mA dBm 3400 mA mS -2.5 V V o Drain Breakdown Voltage Igd=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com |
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